Defect level analysis in wide bandgap semiconductor GaN using first-principles calculations.
Various physical property information such as point defect formation energy, charge, and optical transitions can be obtained.
Gallium nitride (GaN), a wide bandgap semiconductor, is primarily used in the field of power devices, and in recent years, there has been an increasing demand for applications such as rapid chargers and 5G communication base stations. In the development of high-reliability GaN, it is important to understand the reduction of defects in the crystal and the impact of these defects on electrical and optical properties. This document presents a case study analyzing the defect levels formed by nitrogen vacancies (VN) in GaN using first-principles calculations. This analysis is applicable not only to vacancies but also to various point defects in crystalline materials, such as element substitutions. For more details, please download the document or contact us.
- Company：一般財団法人材料科学技術振興財団 MST
- Price：Other
